Transistor IRF640N N-MOSFET
Manufacturer Infineon (IRF)
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 200V
Drain current 18A
Power dissipation 150W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 0.15Ω
Mounting THT
Gate charge 44.7nC
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